Introduction

In-Situ Pre Purge System

1. Prevent change of device characteristics by Native Oxide generation at interface of Design Rule Device
    under 45nm
  • Poly for Bit-Line, Capacitor and Gate

  • 2. Prevention of changes in film quality due to Native Oxide and AMC production according to delivery time between
        pre-process and current-process, and optimization of unit process control
  • Decrease particle level
  • Improvement of Thickness Uniformity by preventing Native Oxide and AMC generation
  • Increase the batch size of Batch equipment and Queue-Time Control(Increase productivity)
  • Improving Quality / Reliability

  • *AMC (Airborne Molecular Contaminants)


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